Contact Platform Support
Help CenterV:YAG Passive Q-switching Crystal
Product Spotlights
Related Products
Introduction
Vanadium-doped yttrium aluminum garnet crystal is abbreviated as V:YAG crystal, with the chemical
formula V:Y₃Al₅O₁₂. It is a novel saturable absorber material suitable for passive Q-switching of lasers in the wavelength range of 1.0–1.5 μm, and presents particularly prominent advantages for 1.3 μm neodymium (Nd) lasers.
High Ground State Absorption (GSA) Cross-section
Near 1.3 μm, the ground state absorption (GSA) cross-section of V³⁺:YAG reaches as high as \(7\times10^{-18}\ \
mathrm{cm^2}\), which is significantly higher than that of traditional materials such as Cr⁴⁺:YAG. It can efficiently
absorb laser energy and trigger the Q-switching process.
Extremely Low Excited State Absorption (ESA)
The excited state absorption is negligible, enabling a Q-switching contrast ratio (ratio of initial small-signal
absorption to saturated absorption) exceeding 10. This ensures high-contrast pulse modulation and eliminates
interference from continuous laser background.
Broad Wavelength Adaptability
It is applicable to 1.3 μm and 1.44 μm Nd-doped lasers. Efficient Q-switching can be realized without
intracavity focusing, compatible with both flash lamp pumping and laser diode pumping.
Excellent Crystal Performance
The YAG host crystal features outstanding optical, mechanical and thermal stability, laying a foundation
for designing compact and high-reliability lasers, and is especially suitable for miniaturized and high-power
application scenarios.
Application Potential
Compared with Semiconductor Saturable Absorber Mirrors (SESAM), bulk V³⁺:YAG crystal possesses higher
damage threshold and lower insertion loss, making it a preferred candidate material for passive Q-switching in
the 1.3 μm waveband.
Summary
With high absorption cross-section, low excited state loss and superior physical properties, V³⁺:YAG provides
an innovative solution for the miniaturization and high-power pulse output of 1.3 μm lasers. It has broad application prospects in industrial, medical and scientific research laser fields in the future.
Material Properties
| Parameter | Specification |
|---|---|
| Chemical Formula | V:Y₃Al₅O₁₂ |
| Doping Concentration | 0.1～5 at% |
| Growth Direction | [100] or [111] |
| Crystal Structure | Cubic Crystal System |
| Lattice Parameter | 1.201 nm |
| Density | 4.55 g/cm³ |
| Melting Point | 1970°C |
| Refractive Index @1.34 μm | n=1.81 |
| Mohs Hardness | 8.0 |
| Applicable Wavelength Range | 1–1.5 μm |
| Absorption Cross-section | \(\sim7\times10^{-18}\ \mathrm{cm^2}@1.34\ \mu\mathrm{m}\); \(\sim3\times10^{-18}\ \mathrm{cm^2}@1.06\ \mu\mathrm{m}\) |
| Relaxation Time | 20–30 ns |
Standard Products & Processing Specifications
| Parameter | Technical Index |
|---|---|
| Dimension | W(3×3)～H(10×10)×L(0.5–8) mm³ or customized |
| Initial Transmittance (%) | 40–95% |
| Absorption Coefficient @1.34 μm (cm⁻¹) | 0.1–2.5 |
| Parallelism | 30 arcsec |
| Perpendicularity | 15 arcmin |
| Surface Quality | 10-5 |
| Flatness | λ/8 |
| Wavefront Distortion | λ/4 |
| Effective Aperture | 90% |
| Edge Chipping | ＜ 0.1 mm |
| Chamfer | ＜ 0.1 mm×45° |
Send Inquiry to This Supplier
You May Also Like
-
Rare Earth Doped YLF Laser CrystalNegotiableMOQ: 1 Blade
-
High-Performance YSO CrystalsNegotiableMOQ: 1 Blade
-
YAG Optical CrystalNegotiableMOQ: 1 Blade
-
Cultivated Rough Colored GemstonesNegotiableMOQ: 1 Blade
-
YAG (Ce) Scintillation Crystals Available in As-grown Wafers, Polished Wafers and Coated Wafers.NegotiableMOQ: 1 Blade
-
Ce:GAGG Cintillation CrystalNegotiableMOQ: 1 Blade
-
Ce:LUAG Cintillation CrystalNegotiableMOQ: 1 Blade
-
Ce:YAP Scintillation CrystalNegotiableMOQ: 1 Blade
-
Ce:LYSO Scintillation CrystalsNegotiableMOQ: 1 Blade
-
BGO Scintillation CrystalNegotiableMOQ: 1 Blade
