FM25V02A-GTR SOP-8 Ferroelectric Memory (FRAM) CYPRESS Original Stock

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FM25V02A is a 256kbit nonvolatile memory that utilizes advanced ferroelectric technology. F-RAM is non volatile and performs reads and writes similar to RAM. It provides 151 years of reliable data retention while eliminating complexity, overhead, and system level reliability issues caused by serial flash memory, EEPROM, and other non volatile memories.

Unlike serial flash and EEPROM, FM25V02A performs write operations at bus speed. No write delay will occur. After each byte is successfully transferred to the device, the data will be immediately written to the memory array. The next bus cycle can start without the need for data polling. In addition, compared to other non volatile memory, this product provides considerable write endurance. FM25V02A can support 10 14 read/write cycles, or 100 million times more write cycles than EEPROM.

These features make FM25V02A an ideal choice for non volatile memory applications that require frequent or fast writes. Examples range from data logging, where the number of write cycles may be critical, to required industrial control, where long write times for serial flash or EEPROM may result in data loss.

FM25V02A provides substantial benefits for users of serial EEPROM or flash. FM25V02A adopts a high-speed SPI bus, enhancing the high-speed write capability of F-RAM technology. This device contains a read-only device ID that allows the host to determine the manufacturer, product density, and product revision. The specifications of this equipment are guaranteed to be within an industrial range of -40 ° C to+85 ° C.