W9825G6KH-6I Synchronous Dynamic Random Access Memory WINBOND Original Stock
describe
W9825G6KH is a high-speed synchronous dynamic random access memory (SDRAM), organized into 4M words x 4 banks x 16 bits. W9825G6KH provides a data bandwidth of up to 200M words per second. To fully comply with the personal computer industry standards, W9825G6KH is classified into the following speed levels: -5, -5I, -6, -6I, -6L, -75, and 75L- 5/-5I grade components comply with the 200MHz/CL3 specification (-5I industrial grade, guaranteed to support -40 ° C ≤ TA ≤ 85 ° C)- 6/-6I/-6L grade components meet the 166MHz/CL3 specification (-6I industrial grade, guaranteed to support -40 ° C ≤ TA ≤ 85 ° C)- 75/75L meets the 133MHz/CL3 specification- The 6L and 75L components support self refreshing of the current IDD6 max. 1.5 mA
Access to SDRAM is targeted towards bursts. When selecting banks and rows through activity commands, continuous memory locations on a page can be accessed with burst lengths of 1, 2, 4, 8, or full pages. The column address is automatically generated by the internal counter of SDRAM during burst operations. Random column reading may also be achieved by providing its address at each clock cycle. The nature of multiple banks allows for the interweaving of internal banks to conceal estimated time costs.
By having programmable mode registers, the system can change the burst length, delay period, interleaving, or sequential burst to maximize its performance. W9825G6KH is the ideal main memory for high-performance applications.
FEATURES
3.3V ± 0.3V Power Supply
Up to 200 MHz Clock Frequency
4,194,304 Words 4 Banks 16 Bits Organization
Self Refresh Mode: Standard and Low Power
CAS Latency: 2 and 3
Burst Length: 1, 2, 4, 8 and Full Page
Burst Read, Single Writes Mode
Byte Data Controlled by LDQM, UDQM
Power Down Mode
Auto-precharge and Controlled Precharge
8K Refresh Cycles/64 mS
Interface: LVTTL
Packaged in TSOP II 54-pin, 400 mil - 0.80, using Lead free materials with RoHS compliant
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