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MJE15033 PNP Transistors -250V -8A TO-220W

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USD $0.01 - $1 / Piece

100 Pieces(Min.Order)

Supply Ability 100000 Piece / Pieces per Month
Port Shanghai shenzhen or follow customer demand
Payment Terms:T/T L/C D/P D/A Credit Card

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Product Details

Place of Origin:	Jiangsu, China	Brand Name:	HC	Model Number:	MJE15033
Type:	Bipolar Junction Transistor	Package Type:	Throught Hole

Product Description

Features:
-Power Amplifier Applications
-Complementary to MJ21196G
-High collector voltage: VCEO=-250V (min)
- High SOA:3A , 80V , 1Sec
- 250 WATTS

Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings.

Absolute Maximum Ratings(Tc=25℃):

Characteristics	Symbol	Rating	Unit
Collector-base voltage	VCBO	-400	V
Collector-emitter voltage	VCEO	-250	V
Emitter-base voltage	VEBO	-7	V
Collector current	IC	-17	A
Base current	IB	-5	A
Collector power dissipation;Tc=25℃	PC	250	W
Junction temperature	Tj	150	℃
Storage temperature range	TSTG	-55~150	℃

Electrical Characteristics Tc=(25℃ ）:

Characteristics	Symbol	Test Condition	Min	Typ	Max	Unit
Collector cut-off current	ICBO	VCB=230V; IE=0			500	uA
Emitter cut-off current	IEBO	VEB=7V; Ic=0			500	uA
Dc current gain	hFE	IC=5A; VCE=4V;	70		140
Collector-emitter saturation voltage	VCE(sat)	IC=4A; IB=0.4A			0.5	V
Transition frequency	fT	VCE=10V; ICE=500mA ;f=1MHZ		58		MHZ

Symbol	Parameter	Typ	Units
RθJC	Junction-to-Case	0.83	℃/W

Related Products

* Below are part of general products provided by Thunder

* Package type could be adjusted according to customer needs

* New product (not in below list) could be developed according to customer needs

2SA1943	VCEO=-230V (min)	PNP TRANSISTORS	Complementary to 2SC5200
2SA5200	VCEO=230V (min)	NPN TRANSISTORS	Complementary to 2SA1943
MJ21195G	VCEO=-250V (min)	PNP TRANSISTORS	Complementary to MJ21196G
MJ21196G	VCEO=250V (min)	NPN TRANSISTORS	Complementary to MJ21195G
TIP42C	VCEO=-100V (min)	PNP TRANSISTORS	Complementary to TIP41C
TIP41C	VCEO=100V (min)	NPN TRANSISTORS	Complementary to TIP42C
2SA1837	VCEO=-230V (min)	PNP TRANSISTORS	Complementary to 2SC4793
2SC4793	VCEO=230V (min)	NPN TRANSISTORS	Complementary to 2SA1837
2SA1941	VCEO=-200V (min)	PNP TRANSISTORS	Complementary to 2SC5198
2SC5198	VCEO=200V (min)	NPN TRANSISTORS	Complementary to 2SA1941

Our Company

Thunder Microeletronics was establised in 1995, specialized in power semiconductor parts production for over 20 years. Factory Area is over 7000m², incluse 1000m² purification workshop (10T grade) . Our main products are Schottky Diodes, Fast and Ultra Fast Recovery Diode, Mosfet (Field-Effort diode), Transistors, Rectfider Bridges and Power Management IC. We have own product deveopment and applicatioon team, fully support your requirements.

Thunder Values :

* Future and Result Focus

*Reliability, Credibility, Legality

*Initiative and Sustainability
*Determination and Responsibility
*Trust, Openness and Fairness

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Delivery

* For general Diodes in stock,shippment in 3 days after payment received.

* We expect customer to place order 15 days in advance, in case the ordering quantity is large or product is not our regular stock.

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Contact Us

Wuxi Thunder Microelectronics Co., Ltd.: Contact nameLana Shen; Phone0086-510-85169977-8037; AddressG2 200 Linghu Road, New District, Wuxi Wuxi,Jiangsu

Product Categories

Bipolar junction transistor	Fast Recovery Diode	Field-Effect Transistor	New Products
Power Management IC	Schottky Diode

New Products

MJE15033 PNP Transistors -250V -8A TO-220W

Product Details

Product Description

Absolute Maximum Ratings(Tc=25℃):

Electrical Characteristics Tc=(25℃ ）:

Delivery

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