DMN1008UFDF-7 Diodes Incorporated MOSFET MOSFET BVDSS: 8V-24V

DMN1008UFDF-7

Manufacturer: Diodes Incorporated

Product Category: MOSFET

RoHS: Details

Technology: Si

Mounting Style: SMD/SMT

Package / Case: U-DFN2020-6

Transistor Polarity: N-Channel

Number of Channels: 1 Channel

Vds - Drain-Source Breakdown Voltage: 12 V

Id - Continuous Drain Current: 12.2 A

Rds On - Drain-Source Resistance: 6.6 mOhms

Vgs - Gate-Source Voltage: - 8 V, + 8 V

Vgs th - Gate-Source Threshold Voltage: 300 mV

Qg - Gate Charge: 13.6 nC

Minimum Operating Temperature: - 55 C

Maximum Operating Temperature: + 150 C

Pd - Power Dissipation: 1.7 W

Channel Mode: Enhancement

Packaging: Reel

Packaging: Cut Tape

Packaging: kxxReel

Brand: Diodes Incorporated

Configuration: Single

Fall Time: 7.5 ns

Product Type: MOSFET

Rise Time: 6.6 ns

factory pack quantiy: 3000

Subcategory: MOSFETs

Typical Turn-Off Delay Time: 17.5 ns

Typical Turn-On Delay Time: 3.5 ns

Unit Weight: 0.002293 oz