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Help Center2SA1298-Y,LF Toshiba Bipolar Transistors - BJT Bias Resistor Built-in Transistor
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2SA1298-Y,LF
Manufacturer: Toshiba
Product Category: Bipolar Transistors - BJT
RoHS: Details
Mounting Style: SMD/SMT
Package / Case: TO-236MOD-3
Transistor Polarity: PNP
Configuration: Single
Collector- Emitter Voltage VCEO Max: 25 V
Collector- Base Voltage VCBO: 30 V
Emitter- Base Voltage VEBO: 5 V
Collector-Emitter Saturation Voltage: 400 mV
Maximum DC Collector Current: 800 mA
Pd - Power Dissipation: 200 mW
Gain Bandwidth Product fT: 120 MHz
Minimum Operating Temperature: -
Maximum Operating Temperature: + 150 C
Qualification: AEC-Q101
Series: 2SA1298
Packaging: Reel
Packaging: Cut Tape
Packaging: KXXReel
Brand: Toshiba
Continuous Collector Current: - 800 mA
DC Collector/Base Gain hfe Min: 40
DC Current Gain hFE Max: 320
Product Type: BJTs - Bipolar Transistors
factory pack quantity: 3000
Subcategory: Transistors
Technology: Si
Unit Weight: 0.000423 oz
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