SI3932DV-T1-GE3 Vishay Semiconductors MOSFET 30V Vds 20V Vgs TSOP-6

SI3932DV-T1-GE3

Manufacturer: Vishay

Product Category: MOSFET

RoHS: Details

Technology: Si

Mounting Style: SMD/SMT

Package / Case: TSOP-6

Transistor Polarity: N-Channel

Number of Channels: 2 Channel

Vds - Drain-Source Breakdown Voltage: 30 V

Id - Continuous Drain Current: 3.7 A

Rds On - Drain-Source Resistance: 58 mOhms

Vgs - Gate-Source Voltage: - 20 V, + 20 V

Vgs th - Gate-Source Threshold Voltage: 1.2 V

Qg - Gate Charge: 6 nC

Minimum Operating Temperature: - 55 C

Maximum Operating Temperature: + 150 C

Pd - Power Dissipation: 1.4 W

Channel Mode: Enhancement

Tradename: TrenchFET

Series: SI3

Packaging: Reel

Packaging: Cut Tape

Packaging: KXXReel

Brand: Vishay Semiconductors

Configuration: Dual

Fall Time: 10 ns

Forward Transconductance - Min: 10 S

Product Type: MOSFET

Rise Time: 15 ns

factory pack quantity: 3000

Subcategory: MOSFETs

Transistor Type: 2 N-Channel

Typical Turn-Off Delay Time: 10 ns

Typical Turn-On Delay Time: 10 ns

Part # Aliases: SI3932DV-GE3

Unit Weight: 0.000705 oz