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MJD5731T4G Onsemi Bipolar Transistors - BJT 1A 350V 15W PNP

MJD5731T4G Onsemi Bipolar Transistors - BJT 1A 350V 15W PNP photo-1
MJD5731T4G Onsemi Bipolar Transistors - BJT 1A 350V 15W PNP photo-2
MJD5731T4G Onsemi Bipolar Transistors - BJT 1A 350V 15W PNP photo-3
MJD5731T4G Onsemi Bipolar Transistors - BJT 1A 350V 15W PNP photo-4
MJD5731T4G Onsemi Bipolar Transistors - BJT 1A 350V 15W PNP photo-5
US$ 0.1 - 0.61 MOQ: 1 Piece
Key Specifications
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Brand Name:
onsemi
Place of Origin:
China
Model Number:
MJD5731T4G
Payment & Shipping
Payment Methods:
Port of Shipment:
Shenzhen
Delivery Detail:
Delivery time depends on order quantity.
Brand Name onsemi
Place of Origin China
Model Number MJD5731T4G
Type Bipolar Junction Transistor
Package Type Surface Mount

MJD5731T4G


Manufacturer: onsemi

Product Category: Bipolar Transistors - BJT

RoHS: Details

REACH - SVHC:

Mounting Style: SMD/SMT

Package / Case: TO-252-3

Transistor Polarity: PNP

Configuration: Single

Collector- Emitter Voltage VCEO Max: 350 V

Collector- Base Voltage VCBO: -

Emitter- Base Voltage VEBO: 5 V

Collector-Emitter Saturation Voltage: 1 V

Maximum DC Collector Current: 1 A

Pd - Power Dissipation: 15 W

Gain Bandwidth Product fT: 10 MHz

Minimum Operating Temperature: - 55 C

Maximum Operating Temperature: + 150 C

Series: MJD5731

Packaging: Reel

Packaging: Cut Tape

Packaging: kxxReel

Brand: onsemi

Continuous Collector Current: 1 A

DC Collector/Base Gain hfe Min: 30

Height: 2.38 mm

Length: 6.73 mm

Product Type: BJTs - Bipolar Transistors

factory pack quantity: 2500

Subcategory: Transistors

Technology: Si

Width: 6.22 mm

Unit Weight: 0.012381 oz


Product Tags: MJD5731T4G , onsemi , Bipolar Transistors - BJT 1A 350V 15W PNP

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Business license
Business Type
Trading Company
Year Established
2011
Annual Export Value
US$5 Million - US$10 Million
Port of Shipment
Shenzhen

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