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Mfr. #
IXTQ60N20T
Manufacturer IXYS
Product Category MOSFET
RoHS Details
Technology Si
Mounting Style Through Hole
Package Case TO-3P-3
Transistor Polarity N-Channel
Number of Channels 1 Channel
Vds - Drain-Source Breakdown Voltage 200 V
Id - Continuous Drain Current 60 A
Rds On - Drain-Source Resistance 40 mOhms
Vgs - Gate-Source Voltage - 20 V, + 20 V
Vgs th - Gate-Source Threshold Voltage 3 V
Qg - Gate Charge 73 nC
Minimum Operating Temperature - 55 C
Maximum Operating Temperature + 175 C
Pd - Power Dissipation 500 W
Channel Mode Enhancement
Tradename HiPerFET
Packaging Tube
Brand IXYS
Configuration Single
Fall Time 22 ns
Forward Transconductance - Min 40 S
Product Power MOSFET Modules
Product Type MOSFET
Rise Time 13 ns
Factory Pack Quantity 30
Subcategory MOSFETs
Transistor Type 1 N-Channel
Type Trench
Typical Turn-Off Delay Time 33 ns
Typical Turn-On Delay Time 22 ns
Unit Weight 0.056438 oz
PRICE 4.77~5.3
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