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Hall Effect Testing System HET-3L
Negotiable
MOQ: 1 Set (Price negotiable depending on order volume and customization)
Key Specifications
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Model:
HET-3L
Temperature Range:
Room Temperature
Resistivity Range:
10- 5 -106Ω•cm
Payment & Shipping
Payment Methods:
Port of Shipment:
China
Delivery Detail:
Delivery time depends on order quantity.
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Model
HET-3L
Temperature Range
Room Temperature
Resistivity Range
10- 5 -106Ω•cm
Hall Coefficient Range
10-2-106cm3/C
Sample Size
10mm–20mm
Sample Thickness
10nm-1mm
Origin
China
Hall Effect Testing System
The Hall Effect Testing System HET-3L is based on the van der Waals method to measure the electrical transport performance parameters of materials, such as carrier concentration, mobility, resistivity, Hall coefficient, etc. It can be used to measure thin film or thin layer materials and can be applied to all semiconductor materials,including Si, ZnO, SiGe, SiC, GaAs, InGaAs, InP, GaN (N-type&P-type can be measured). It is widely used in domestic universities, research institutes, semiconductors, metals, high thermal conductivity organic new materials and other industries.
Product Features
l Adopt a precision constant current source and voltmeter to ensure good accuracy and high stability of instrument testing, with superior performance.
l The test parameters are consistent with scientific research equipment, with complete functions and high cost - effectiveness.
l It can test non - standard samples, is easy to install, and meets teaching and scientific research needs at the same time.
l It is an innovative experimental equipment and can be used as a comparison and supplement to basic university physics experiments.
l Equipped with self - contained software, optimized for Chinese users, making the testing process more convenient.
Application Functions
l Carrier type identification: By measuring the Hall coefficient, the type of current carrier can be determined, whether it is positive - charge holes or negative - charge electrons, so as to obtain the electronic structure and band characteristics of semiconductors or conductors.
l Carrier concentration measurement: There is a relationship between the Hall coefficient and the carrier concentration. Therefore, by measuring the Hall coefficient, the carrier concentration in the material can be estimated.
l Mobility evaluation: The Hall coefficient can also be used to calculate the carrier mobility, that is, the ability of charge carriers to move in the material, so as to conduct in - depth research on the electrical conductivity and electron mobility of the material.
l Material electrical performance evaluation: By understanding information such as the electronic structure, carrier type, concentration and mobility of the material, the electrical performance of the material can be evaluated more comprehensively, providing important references for the design of electronic devices and circuits
Technical Parameters (Partial)
Temperature Range: Room Temperature
Magnetic Induction Intensity: 0.6T
Resistivity Range: 10- 5 -106Ω•cm
Hall Coefficient Range: 10-2-106cm3/C
Mobility Range: 1-105cm2/(V•s)
Carrier Concentration Range: 1012-1021/cm3
Sample Size: Edge Length or Diameter:10mm–20mm; Thickness: 10nm-1mm
Send Inquiry to This Supplier
Main Markets
Southeast Asia, Eastern Asia, South Asia
Location
Wuhan, Hubei, China
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