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Help CenterIRF5305SPBF Infineon Technologies MOSFET 1 P-CH -55V HEXFET 60mOhms 42nC
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Mfr. #:
IRF5305SPBF
Manufacturer: Infineon
Product Category: MOSFET
RoHS: Details
Technology: Si
Mounting Style: SMD/SMT
Package / Case: TO-252-3
Transistor Polarity: P-Channel
Number of Channels: 1 Channel
Vds - Drain-Source Breakdown Voltage: 55 V
Id - Continuous Drain Current: 31 A
Rds On - Drain-Source Resistance: 60 mOhms
Vgs - Gate-Source Voltage: - 20 V, + 20 V
Qg - Gate Charge: 42 nC
Minimum Operating Temperature: - 55 C
Maximum Operating Temperature: + 175 C
Pd - Power Dissipation: 110 W
Channel Mode: Enhancement
Packaging: Tube
Brand: Infineon Technologies
Configuration: Single
Fall Time: 63 ns
Height: 2.3 mm
Length: 6.5 mm
Product Type: MOSFET
Rise Time: 66 ns
factory pack quantiy: 1000
Subcategory: MOSFETs
Transistor Type: 1 P-Channel
Type: HEXFET Power MOSFET
Typical Turn-Off Delay Time: 39 ns
Typical Turn-On Delay Time: 14 ns
Width: 6.22 mm
Part # Aliases: SP001563340
Unit Weight: 0.011640 oz
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