IRF7526D1TR FETKY MOSFET & Schottky Diode P-Channel International Rectifier

IRF7526D1TR

International Rectifier

l Co-packaged HEXFET Power

MOSFET and Schottky Diode

l P-Channel HEXFET

l Low VF Schottky Rectifier

l Generation 5 Technology

l Micro8TM Footprint

Description:

The FETKYTM family of co-packaged HEXFETs and Schottky diodes offer the

designer an innovative board space saving solution for switching regulator

applications. Generation 5 HEXFETs utilize advanced processing techniques to

achieve extremely low on-resistance per silicon area. Combining this technology

with International Rectifier's low forward drop Schottky rectifiers results in an

extremely efficient device suitable for use in a wide variety of portable electronics

applications like cell phone, PDA, etc.

The new Micro8TM package, with half the footprint area of the standard SO-8, provides

the smallest footprint available in an SOIC outline. This makes the Micro8TM an ideal

device for applications where printed circuit board space is at a premium. The low

profile (<1.1mm) of the Micro8TM will allow it to fit easily into extremely thin application

environments such as portable electronics and PCMCIA cards.

Notes:

 Repetitive rating – pulse width limited by max. junction temperature (see Fig. 9)

‚ ISD ≤ -1.2A, di/dt ≤ 160A/µs, VDD ≤ V(BR)DSS, TJ ≤ 150°C

ƒ Pulse width ≤ 300µs – duty cycle ≤ 2%

„ When mounted on 1 inch square copper board to approximate typical multi-layer PCB thermal resistance