IRFR120NTRPBF Infineon Technologies MOSFET 100V 1 N-CH HEXFET 210mOhms 16.7nC

Mfr. #:

IRFR120NTRPBF

Manufacturer: Infineon

Product Category: MOSFET

Technology: Si

Mounting Style: SMD/SMT

Package / Case: TO-252-3

Transistor Polarity: N-Channel

Number of Channels: 1 Channel

Vds - Drain-Source Breakdown Voltage: 100 V

Id - Continuous Drain Current: 9.4 A

Rds On - Drain-Source Resistance: 210 mOhms

Vgs - Gate-Source Voltage: - 20 V, + 20 V

Vgs th - Gate-Source Threshold Voltage: 1.8 V

Qg - Gate Charge: 25 nC

Minimum Operating Temperature: - 55 C

Maximum Operating Temperature: + 175 C

Pd - Power Dissipation: 48 W

Channel Mode: Enhancement

Packaging: Reel

Packaging: Cut Tape

Packaging: KXXReel

Brand: Infineon Technologies

Configuration: Single

Fall Time: 23 ns

Height: 2.3 mm

Length: 6.5 mm

Product Type: MOSFET

Rise Time: 23 ns

factory pack quantiy: 2000

Subcategory: MOSFETs

Transistor Type: 1 N-Channel

Type: HEXFET Power MOSFET

Typical Turn-Off Delay Time: 32 ns

Typical Turn-On Delay Time: 4.5 ns

Width: 6.22 mm

Unit Weight: 0.011640 oz