IRFPG50PBF Vishay Semiconductors MOSFET 1000V N-CH HEXFET
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Product Details
Brand Name | Vishay Semiconductors | Place of Origin | China | |
Model Number | IRFPG50PBF | Type | Other, MOSFET | |
Package Type | Throught Hole |
Product Description
Factory
Mfr. #:
IRFPG50PBF
Manufacturer: Vishay
Product Category: MOSFET
RoHS: Details
Technology: Si
Mounting Style: Through Hole
Package / Case: TO-247-3
Transistor Polarity: N-Channel
Number of Channels: 1 Channel
Vds - Drain-Source Breakdown Voltage: 1 kV
Id - Continuous Drain Current: 6.1 A
Rds On - Drain-Source Resistance: 2 Ohms
Vgs - Gate-Source Voltage: - 20 V, + 20 V
Vgs th - Gate-Source Threshold Voltage: 2 V
Qg - Gate Charge: 190 nC
Minimum Operating Temperature: - 55 C
Maximum Operating Temperature: + 150 C
Pd - Power Dissipation: 190 W
Channel Mode: Enhancement
Series: IRFPG
Packaging: Tube
Brand: Vishay Semiconductors
Configuration: Single
Fall Time: 36 ns
Forward Transconductance - Min: 5.4 S
Product Type: MOSFET
Rise Time: 35 ns
factory pack quantiy: 500
Subcategory: MOSFETs
Transistor Type: 1 N-Channel
Typical Turn-Off Delay Time: 130 ns
Typical Turn-On Delay Time: 19 ns
Unit Weight: 0.211644 oz
Contact Us
- Shenzhen Kexinxin Technology Co., Ltd.
- Contact nameAaron Lin Chat Now
- Phone86-0755-23617721
- AddressFutian, Shenzhen, Guangdong
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