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IRFPG50PBF Vishay Semiconductors MOSFET 1000V N-CH HEXFET

IRFPG50PBF Vishay Semiconductors MOSFET 1000V N-CH HEXFET photo-1
IRFPG50PBF Vishay Semiconductors MOSFET 1000V N-CH HEXFET photo-2
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IRFPG50PBF Vishay Semiconductors MOSFET 1000V N-CH HEXFET photo-4
IRFPG50PBF Vishay Semiconductors MOSFET 1000V N-CH HEXFET photo-5
US$ 0.7 - 5 MOQ: 1 Piece
Key Specifications
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Brand Name:
Vishay Semiconductors
Place of Origin:
China
Model Number:
IRFPG50PBF
Payment & Shipping
Payment Methods:
Port of Shipment:
Shenzhen
Delivery Detail:
Delivery time depends on order quantity.
Brand Name Vishay Semiconductors
Place of Origin China
Model Number IRFPG50PBF
Type Other, MOSFET
Package Type Throught Hole

Mfr. #:

IRFPG50PBF


Manufacturer: Vishay

Product Category: MOSFET

RoHS: Details

Technology: Si

Mounting Style: Through Hole

Package / Case: TO-247-3

Transistor Polarity: N-Channel

Number of Channels: 1 Channel

Vds - Drain-Source Breakdown Voltage: 1 kV

Id - Continuous Drain Current: 6.1 A

Rds On - Drain-Source Resistance: 2 Ohms

Vgs - Gate-Source Voltage: - 20 V, + 20 V

Vgs th - Gate-Source Threshold Voltage: 2 V

Qg - Gate Charge: 190 nC

Minimum Operating Temperature: - 55 C

Maximum Operating Temperature: + 150 C

Pd - Power Dissipation: 190 W

Channel Mode: Enhancement

Series: IRFPG

Packaging: Tube

Brand: Vishay Semiconductors

Configuration: Single

Fall Time: 36 ns

Forward Transconductance - Min: 5.4 S

Product Type: MOSFET

Rise Time: 35 ns

factory pack quantiy: 500

Subcategory: MOSFETs

Transistor Type: 1 N-Channel

Typical Turn-Off Delay Time: 130 ns

Typical Turn-On Delay Time: 19 ns

Unit Weight: 0.211644 oz


Product Tags: IRFPG50PBF , Vishay Semiconductors , MOSFET 1000V N-CH HEXFET

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Business Type
Trading Company
Year Established
2011
Annual Export Value
US$5 Million - US$10 Million
Port of Shipment
Shenzhen

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