- Homray Material Technology
- Main products: GaN Substrate Manufacturers, GaN Wafer Suppliers, GaN-On-Sapphire Wafer Manufacturers, SiC Substrate Manufacturers, SiC Wafer Suppliers, GaN-On-Si Epi Wafer Suppliers, GaN-On-SiC Epi Wafer Suppliers, GaN-On-Silicon Epi Wafer Suppliers
Home > Products > Silicon Carbide Wafer > Single Crystal SiC Ingots Manufacturer China SiC Substrate Factory
Single Crystal SiC Ingots Manufacturer China SiC Substrate Factory
- 100000 Millimeter / Millimeters per Month
- SHANGHAI
- T/T
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Product Details
| Brand Name | HMT | Place of Origin | China | |
| Model Number | 6 inch |
Product Description
Single Crystal SiC Ingots Manufacturer China SiC Substrate Factory
HMT company offer 4 inch and 6inch single crystal SiC ingots for wire-saw machine testing and sic wafer.
In high power applications, the third generation semiconductor has wide energy gap, high temperature resistance and high power density characteristics; In high frequency applications, it has the characteristics of low energy consumption and good heat dissipation. Demand for electric vehicles, 5G infrastructure and fast charging are the main growth drivers. SiC transistors and silicon carbide GaN transistors are two products with high growth, annual compound growth rate of 27% and 26%, respectively, need to use SiC substrate.
Contact Us
- Homray Material Technology
- Contact nameTina Chang Chat Now
- Phone86-512-67078567
- Address60 Suli Road, Suzhou, Jiangsu
Product Categories
| Silicon Wafer | Silicon Carbide Wafer | Gallium Nitride |
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