Single Crystal SiC Ingots Manufacturer China SiC Substrate Factory

Single Crystal SiC Ingots Manufacturer China SiC Substrate Factory

HMT company offer 4 inch and 6inch single crystal SiC ingots for wire-saw machine testing and sic wafer.

In high power applications, the third generation semiconductor has wide energy gap, high temperature resistance and high power density characteristics;  In high frequency applications, it has the characteristics of low energy consumption and good heat dissipation.  Demand for electric vehicles, 5G infrastructure and fast charging are the main growth drivers. SiC transistors and silicon carbide GaN transistors are two products with high growth, annual compound growth rate of 27% and 26%, respectively, need to use SiC substrate.