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Home > Electrical & Electronics > Semiconductor > Intrinsic Semiconductor > 4 Inch AlGaN/GaN-on-SiC Epitaxy Wafer Manufacturer
4 Inch AlGaN/GaN-on-SiC Epitaxy Wafer Manufacturer
Negotiable
MOQ: 10 Pieces (Price negotiable depending on order volume and customization)
Key Specifications
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Brand Name:
HMT
Place of Origin:
China
Model Number:
4 inch
Payment & Shipping
Payment Methods:
Port of Shipment:
SHANGHAI
Delivery Detail:
30 days
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Brand Name
HMT
Place of Origin
China
Model Number
4 inch
4 inch AlGaN/GaN-on-SiC Epitaxy Wafer Manufacturer
HMT company produces 4 inch GaN-on-SiC Epi wafer both for RF application and HEMT application. Using gallium nitride (GaN) HEMT epiwafer brings various benefits for the next generation high frequency and high power devices. GaN devices can achieve very high power efficiency, which accordingly reduces their size and lower power consumption, consequently that of their final products.
5G-related RF devices, such as power amplifier
High-efficiency power electronics devices, such as power supplies, DC/DC converter, etc.
Durable and reliable devices in harsh environments
High-end sensor devices
Send Inquiry to This Supplier
Business Type
Manufacturer
Year Established
2009
Factory Size
10,000-30,000 square meters
Total Employees
11 - 50 People
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