Unpolishing 8 inch SiC substrate manufacturer As-cut SiC wafer

Unpolishing 8 inch SiC substrate manufacturer As-cut SiC wafer

8 inch SiC wafer is the newest dimension of SiC products. HMT can manufacture 8 inch unpolishing As-cut SiC wafer for grinding and polishing test application. Althrough 6 inch SiC substate wafer is the mainstream dimension in the word now, but it will be switch to 8 inch in the furture. If customer want to update equipment to support 8 inch SiC wafer, please contact us to purchase 8 inch As-cut SiC wafer to testing.

Compared with traditional silicon materials, SiC SiC has three most significant characteristics: large band gap width, high critical breakdown field strength and high thermal conductivity. Specifically, in terms of band gap width, 4H SiC is three times that of silicon, so it can work stably at higher temperatures (such as automotive electronics); In terms of the critical breakdown field strength, SiC can reach 10 times that of silicon, and can produce high-voltage power devices under the condition of higher impurity concentration and thinner drift layer thickness, so as to realize the three characteristics of "high voltage", "low conduction resistance" and "high frequency" at the same time.In terms of thermal conductivity, SiC can reach 3 times that of silicon, which can improve the thermal conductivity, and high thermal conductivity is also conducive to the development of electronic components to more miniaturized.