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Help Center930um SiC As-cut Wafer Manufacturers for Grinding Wheel Testing
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930um SiC As-cut wafer manufacturers for grinding wheel testing
HMT company produce 600um and 930um thickness As-cut SiC wafer for grinding wheel lapping and polishing testing . We supply both 6 inch and 8 inch unpolished SiC wafer for domestic and foreign customers with competitive price on the market.
SiC crystal has a high matching with GaN material lattice constant and thermal expansion coefficient and excellent thermal conductivity, is an ideal GaN substrate material, such as LED,LD. Therefore, the SiC substrate processing technology is an important basis for the production of devices, the quality and accuracy of the surface processing, will directly affect the quality of the epitaxial film and the performance of the device, so the processing of silicon carbide substrate materials requires the surface of the wafer ultra-smooth, no defects, no damage, surface roughness below the nanometer.
Rough grinding: using cast iron disc + single crystal diamond grinding liquid two-sided grinding method
This process can effectively remove the damaged layer caused by line cutting, repair the surface shape, reduce
TTV, Bow, Warp, and the removal rate is stable, generally reaching 0.8-1.2um/min removal rate.
However, the surface of the wafer after processing by this process is matte, and the roughness is larger, generally
about 50nm, and the removal requirements of the post-process are higher.
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