U Shape Silicon Carbide Heating Elements for Semiconductor Products
Specifications
Silicon carbide heater:1.Heating temperature: 600-1600C
2.Diameter: 8-54mm
3.Length: 240-4000mm
U Shape Silicon Carbide Heating Elements for Semiconductor Products
U type Silicon Carbide SiC heating elements are constructed to from a U-shape. Consequently Type U have the terminals at one end for a single-phase power source. This reduces the number terminations and cold ends thus enabling energy savings.
The technical parameter of U type Silicon Carbide SiC heating elements:
OD(mm) |
HZ(mm) |
CZ(mm) |
A(mm) |
Bridge size |
Resistance |
|
OD |
Length |
|||||
14 |
200 |
250 |
40 |
14 |
54 |
2.4-4.6 |
14 |
250 |
300 |
50 |
14 |
64 |
3.0-6.0 |
14 |
300 |
350 |
60 |
14 |
74 |
3.6-7.0 |
16 |
200 |
250 |
40 |
16 |
56 |
1.4-2.8 |
16 |
250 |
300 |
50 |
16 |
66 |
1.8-3.6 |
16 |
300 |
350 |
60 |
16 |
76 |
2.0-5.0 |
18 |
300 |
350 |
60 |
18 |
78 |
2.0-5.0 |
18 |
400 |
400 |
70 |
18 |
88 |
2.8-5.8 |
18 |
500 |
450 |
75 |
18 |
93 |
3.6-7.2 |
20 |
250 |
300 |
50 |
20 |
70 |
1.8-3.6 |
20 |
300 |
350 |
60 |
20 |
80 |
2.0-5.0 |
20 |
400 |
400 |
70 |
20 |
90 |
2.8-5.8 |
25 |
400 |
400 |
70 |
25 |
95 |
1.6-3.4 |
25 |
500 |
450 |
75 |
25 |
100 |
2.2-4.4 |
25 |
600 |
500 |
80 |
25 |
105 |
2.6-5.2 |
30 |
600 |
400 |
70 |
30 |
100 |
1.4-2.8 |
30 |
700 |
450 |
75 |
30 |
105 |
1.6-3.2 |
30 |
800 |
500 |
80 |
30 |
110 |
1.8-3.6 |
When you place order, please tell us following data:
a). Outer diameter (OD)

Resistance 2.24 Specify As: S-U,20/300/700/60/2.24
Note:
1.Heater is hard and brittle, please be careful when assem bling and maintaining so as to avoid damage.
2. Heater should be protected against damp during storing or installing to ensure the performance of the heater.
3. When operating the electric furnace at the beginning, the voltage should be increased slowly and cannot be fully loaded at once. Otherwise the larger current will be resulted in the damage of heater.
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