ABB 5SHX03D6004 Integrated Gate-Commutated Thyristor

In the forward blocking state, ABB 5SHX03D6004 withstands a forward anode voltage. Since no trigger signal is received at the gate, the thyristor is in the off state, with only a tiny leakage current present at this time. When a suitable forward trigger pulse is applied to the gate, the injection of gate current will prompt the PNP and NPN transistors inside the thyristor to interact and enter a positive feedback state, causing the device to turn on rapidly, with current flowing from the anode to the cathode. After turning on, as long as the anode current remains above the holding current, the thyristor can maintain the on state even if the gate trigger signal is removed. When the anode current drops below the holding current or a reverse anode voltage is applied, the thyristor will return to the blocking state, thereby achieving precise control of the current in the circuit and meeting the operational requirements of different power systems.

• Voltage Rating: The reverse repetitive peak voltage (VDRM) can reach 6000V, which can well adapt to the voltage requirements of medium-high voltage power systems, providing reliable guarantee for power conversion and control in high-voltage scenarios such as industrial power grids and large-scale power-driven equipment.

• Current Handling Capacity: The collector current can reach 300A, with a certain large current carrying capacity, which can meet the operational needs of specific high-power equipment and ensure continuous and stable power supply under corresponding load conditions.

• Operating Temperature Range: Usually between -40°C and +70°C, it can adapt to temperature changes in different regions and industrial environments, ensuring normal operation even under extreme temperature conditions.

• Efficient Switching Performance: With the advanced gate commutation technology of IGCT, it has extremely fast switching speed and can complete the turn-on and turn-off operations of current in an extremely short time. This enables it to perform excellently in scenarios with high requirements for response speed, such as rapid load changes. It can quickly adjust the current state, effectively improving the dynamic performance and stability of the power system, and ensuring the timeliness and accuracy of power supply.

• High Reliability and Stability: It uses high-quality semiconductor materials and advanced manufacturing processes, and strictly follows high-standard quality control systems. It can operate stably for a long time in harsh industrial environments such as high temperature, high humidity, and strong electromagnetic interference, significantly reducing the incidence of equipment failures and the number of maintenance operations, providing strong support for the continuous production of enterprises, and lowering operational risks and maintenance costs.

• High Energy Conversion Efficiency: Through optimized internal structure and electrical design, it significantly reduces energy loss during power conversion. For example, when applied in medium-high voltage frequency converters, it can efficiently convert input electrical energy into variable-frequency electrical energy required by motors, improving energy utilization efficiency, helping enterprises save energy consumption costs, conforming to the concept of energy conservation and environmental protection, and promoting sustainable development.

• Strong Adaptability: It can be well compatible with various power system equipment and different circuit topologies. Whether it is traditional industrial power drive systems or complex new power architectures such as smart grids and distributed energy access, it can be smoothly integrated and work collaboratively with other equipment, creating convenient conditions for building diversified and intelligent power systems.