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feature
Floating high-direction driver to 600V in bootstrap operation
Driving two N-channel MOSFETs or IGBTs to half-bridge
Configuration
Aim to improve the performance of noisy motors
Apply
290mA source/600mA sink output current function
Output tolerance to negative transients
Internal death time of 420ns can protect MOSFET
Wide low side door driver supply voltage: 10V to 20V
Logical input (Hin and Lin*) 3.3V function
Schmit triggers logical input
VCC undervoltage locking (logic and low-side supply)
Extended temperature range: -40°C to +125°C
describe
TF2103M is a high voltage, high speed gate driver
Ability to drive N-channel MOSFETs and IGBTs halfway
Bridge configuration. High voltage of TF semiconductors
The process enables the high side of the TF2103M to switch to 600V
In bootstrap operation.
TF2103M logic input and standard
Easy interface for TTL and CMOS levels (down to 3.3V)
Use control devices. High driver output function
Pulse current buffer is designed for minimal driver crossover
Conduction. The internal death time of TF2103M is
420N (typical).
TF2103M is available in SOIC-8 (N) and PDIP-8
Pack and run on extended -40°C to +125°C
Temperature range.
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