Telephone TF2104M-TAH is perfectly compatible with IRS2104STRPBF Infineon

feature

Floating high-direction driver to 600V in bootstrap operation

Driving two N-channel MOSFETs or IGBTs to half-bridge

Configuration

Aim to improve the performance of noisy motors

 Apply

290mA source/600mA sink output current function

Output tolerance to negative transients

 Internal death time of 420ns can protect MOSFET

Wide low side door driver supply voltage: 10V to 20V

 Logical input (Hin and Lin*) 3.3V function

Schmit triggers logical input

VCC undervoltage locking (logic and low-side supply)

Extended temperature range: -40°C to +125°C

describe

TF2103M is a high voltage, high speed gate driver

Ability to drive N-channel MOSFETs and IGBTs halfway

Bridge configuration. High voltage of TF semiconductors

The process enables the high side of the TF2103M to switch to 600V

In bootstrap operation.

TF2103M logic input and standard

Easy interface for TTL and CMOS levels (down to 3.3V)

Use control devices. High driver output function

Pulse current buffer is designed for minimal driver crossover

Conduction. The internal death time of TF2103M is

420N (typical).

TF2103M is available in SOIC-8 (N) and PDIP-8

Pack and run on extended -40°C to +125°C

Temperature range.