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Signal Processing
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12 Inch SIC Substrate Silicon Carbide Prime Grade Diameter 300mm Large Size 4H-N Suitable for High Power Device Heat DissipationNegotiableMOQ: 25 BoxesMaterial: Power SemiconductorType: N-Type SemiconductorPackage: DIP(Dual In-line Package)Model: LM317Guizhou Huoying Technology Co., Ltd.