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4 inch Nitrogen doped SiC Ingot Manufacturer
Homray Material Technology provide 4 inch N type SiC Ingot with best quality but favourable price. We also supply semi-insulating SiC crystal. Contact us to get detailed parameters.
Silicon carbide has a higher power density than traditional silicon wafers, making the size and volume of devices smaller and the corresponding battery size smaller, thus extending battery life and giving electric cars longer range. Tesla's Model 3, for example, uses silicon carbide instead of silicon for its current conversion module.
Power devices are one of the most important basic components in power electronics industry, which are widely used in electric energy conversion and circuit control of power equipment. The SiC base gallium nitride (GAN-on-sic) epitaxial wafer grown on semi-insulated SiC substrate can be further made into microwave radio frequency devices. Microwave radio frequency devices are the basic components of signal sending and receiving and the core of wireless communication, mainly including radio frequency switches, LNA, power amplifiers, filters and other devices.
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