SI2306BDS-T1-GE3 Vishay / Siliconix MOSFET 30V 4.0A 1.25W 47mohm @ 4.5V

Mfr. #:

SI2306BDS-T1-GE3

Manufacturer: Vishay

Product Category: MOSFET

RoHS: Details

Technology: Si

Mounting Style: SMD/SMT

Package / Case: SOT-23-3

Transistor Polarity: N-Channel

Number of Channels: 1 Channel

Vds - Drain-Source Breakdown Voltage: 30 V

Id - Continuous Drain Current: 3.16 A

Rds On - Drain-Source Resistance: 47 mOhms

Vgs - Gate-Source Voltage: - 20 V, + 20 V

Vgs th - Gate-Source Threshold Voltage: 3 V

Qg - Gate Charge: 3 nC

Minimum Operating Temperature: - 55 C

Maximum Operating Temperature: + 150 C

Pd - Power Dissipation: 750 mW

Channel Mode: Enhancement

Tradename: TrenchFET

Series: SI2

Packaging: Reel

Packaging: Cut Tape

Packaging: KXXReel

Brand: Vishay / Siliconix

Configuration: Single

Fall Time: 6 ns

Product Type: MOSFET

Rise Time: 12 ns

factory pack quantiy: 3000

Subcategory: MOSFETs

Transistor Type: 1 N-Channel

Typical Turn-Off Delay Time: 14 ns

Typical Turn-On Delay Time: 7 ns

Part # Aliases: SI2306BDS-T1-BE3 SI2306BDS-GE3

Unit Weight: 0.000282 oz