BSC070N10NS3 G Infineon Technologies MOSFET N-Ch 100V 90A TDSON-8 OptiMOS 3

Mfr. #:

BSC070N10NS3 G

Manufacturer: Infineon

Product Category: MOSFET

RoHS: Details

Technology: Si

Mounting Style: SMD/SMT

Package / Case: TDSON-8

Transistor Polarity: N-Channel

Number of Channels: 1 Channel

Vds - Drain-Source Breakdown Voltage: 100 V

Id - Continuous Drain Current: 90 A

Rds On - Drain-Source Resistance: 6.3 mOhms

Vgs - Gate-Source Voltage: - 20 V, + 20 V

Vgs th - Gate-Source Threshold Voltage: 2 V

Qg - Gate Charge: 55 nC

Minimum Operating Temperature: - 55 C

Maximum Operating Temperature: + 150 C

Pd - Power Dissipation: 114 W

Channel Mode: Enhancement

Tradename: OptiMOS

Series: OptiMOS 3

Packaging: Reel

Packaging: Cut Tape

Packaging: kxxReel

Brand: Infineon Technologies

Configuration: Single

Fall Time: 8 ns

Forward Transconductance - Min: 36 S

Height: 1.27 mm

Length: 5.9 mm

Product Type: MOSFET

Rise Time: 10 ns

factory pack quantiy: 5000

Subcategory: MOSFETs

Transistor Type: 1 N-Channel

Typical Turn-Off Delay Time: 29 ns

Typical Turn-On Delay Time: 15 ns

Width: 5.15 mm

Part # Aliases: SP000778082 BSC7N1NS3GXT BSC070N10NS3GATMA1

Unit Weight: 0.003527 oz