SG01M-B18 UVB-only SiC Based UV Photodiode

SG01M-B18

UVB-only SiC based UV photodiode A = 0.20 mm2

◆ SG01M-B18 UV Photodiode eneral Features

Properties of the SG01M-B18 UV Photodiode
• UVB-only sensitivity, PTB reported high chip stability
• Active Area A = 0.20 mm2
• TO18 hermetically sealed metal housing, 1 isolated pin and 1 case pin
• 10mW/cm2 peak radiation results a current of approx. 2500 nA

About the material Silicon Carbide (SiC)
SiC provides  the unique property of  extreme  radiation hardness, near-perfect  visible blindness,  low dark  current, high speed and low noise. These features make SiC the best available material for visible blind semiconductor UV detectors. The SiC detectors can be permanently operated at up to 170°C (338°F). The temperature coeffcient of signal (responsivity)  is also  low,<0.1%/K. Because of the  low noise (dark current  in the fA range), very  low UV radiation intensities can be measured reliably. 

Options 
SiC photodiodes are available with seven different active chip areas from 0.06 mm2 up to 36 mm2. Standard version is broadband UVA-UVB-UVC. Four fltered versions lead to a tighter sensitivity range. All photodiodes have a hermetically sealed metal housing (TO type), either a 5.5 mm diameter TO18 housing or a 9.2 mm TO5 housing. Further option is either a 2 pin header (1 isolated, 1 grounded) or a 3 pin header (2 isolated, 1 grounded).

◆ SG01M-B18 UV Photodiode Specifications