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Silicon Carbide Epitaxial Wafer Manufacturer
Negotiable
MOQ: 3 Pieces (Price negotiable depending on order volume and customization)
Key Specifications
Get Latest Price
Brand Name:
Homray Material Technology
Place of Origin:
China
Model Number:
4inch
Payment & Shipping
Payment Methods:
Port of Shipment:
China
Delivery Detail:
30 days
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Brand Name
Homray Material Technology
Place of Origin
China
Model Number
4inch
Homray Material Technology offers silicon carbide SiC n-type and p-tpye epitaxial wafer. SiC epi wafer is mainly used for Schottky diodes, metal-oxide semiconductor field-effect transistors, junction field effect.
Item |
SiC N-Type Epi Wafer |
SiC P-Type Epi Wafer |
Size |
3inch/ 4inch/ 6inch |
3inch/ 4inch/ 6inch |
Poly-type |
4H |
4H |
Dopant |
Nitrogen |
Aluminum |
Doping Density |
ND-NA |
NA-ND |
Silicon Surface |
9E14~1E19cm-3 |
9E14~1E19cm-3 |
Tolerance |
±15% |
±50% |
Uniformity |
≤10% |
≤20% |
Thickness |
0.2~50μm |
|
Tolerance |
±10% |
±10% |
Uniformity |
≤10% |
≤10% |
Send Inquiry to This Supplier
Business Type
Manufacturer
Year Established
2009
Factory Size
10,000-30,000 square meters
Total Employees
11 - 50 People
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