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Home > Electrical & Electronics > Semiconductor > Intrinsic Semiconductor > 2 Inch 4H-N Silicon Carbide Substrate SiC Wafer Factory
2 Inch 4H-N Silicon Carbide Substrate SiC Wafer Factory
US$ 1 - 1
MOQ: 1 Piece
Key Specifications
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Brand Name:
homray material
Place of Origin:
China
Payment & Shipping
Payment Methods:
Port of Shipment:
Shanghai
Delivery Detail:
30 days
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Brand Name
homray material
Place of Origin
China
Homray material’s conductive n-type 4H single crystal SiC substrates are available in 50mm 76mm100 mm 150mm diameter with a micropipe density down to less than 5 per cm2. The standard orientation is 4 degrees off-axis. The substrates are normally supplied with customer specified SiC epitaxial layers.
Radars, satellites and cellular base stations for modern communication systems handle high power at high frequencies. Future systems will have to be built around nitride HEMT epitaxy grown semi-insulating silicon carbide to achieve the targeted performance.
2 inch 4H-N Silicon Carbide Substrate SiC Wafer factory
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Business Type
Manufacturer
Year Established
2009
Factory Size
10,000-30,000 square meters
Total Employees
11 - 50 People
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