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Manufacturer of Silicon Carbide Wafers and SiC Epi Wafers
Negotiable
MOQ: 3 Pieces (Price negotiable depending on order volume and customization)
Key Specifications
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Brand Name:
Homray Material Technology
Place of Origin:
China
Model Number:
4inch
Payment & Shipping
Payment Methods:
Port of Shipment:
China
Delivery Detail:
30 days
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Brand Name
Homray Material Technology
Place of Origin
China
Model Number
4inch
Homray Material Technology provide customs (silicon carbide) SiC epitaxial on 4H substrate for the development of silicon carbide devices.SiC epi wafer is mainly used for Schottky diodes, metal-oxide semiconductor field-effect transistors, junction field effect.
Item |
SiC N-Type Epi Wafer |
SiC P-Type Epi Wafer |
Size |
3inch/ 4inch/ 6inch |
3inch/ 4inch/ 6inch |
Poly-type |
4H |
4H |
Dopant |
Nitrogen |
Aluminum |
Doping Density |
ND-NA |
NA-ND |
Silicon Surface |
9E14~1E19cm-3 |
9E14~1E19cm-3 |
Tolerance |
±15% |
±50% |
Uniformity |
≤10% |
≤20% |
Thickness |
0.2~50μm |
|
Tolerance |
±10% |
±10% |
Uniformity |
≤10% |
≤10% |
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Business Type
Manufacturer
Year Established
2009
Factory Size
10,000-30,000 square meters
Total Employees
11 - 50 People
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