156*156 Mono N-type Silicon Solar Wafer
156*156 and 156*.75*156.75
N-type Mono silicon solar wafer
Parameter |
Mono Solar Wafer |
Unit |
Crystal Growth method |
CZ |
|
Diameter* |
200 ± 0.5 |
mm |
Length* |
156 ± 0.5 |
mm |
Thickness* |
200 ± 20 |
µm |
Crystal Orientation |
<100> ± 3° |
|
Square |
90 ± 0.3 |
Degree |
Type-Dopant |
N / Phosphorus |
|
Resistivity* |
1.8 – 13 (annealed) |
Ωcm |
Lifetime |
=> 100 |
µs |
Oxygen Concentration |
< 20 |
ppma |
Carbon Concentration |
< 1 |
ppma |
Dislocation Density (Etching Pits) |
3000 |
cm2 |
Warp |
75 |
µm |
BOW |
75 |
µm |
Saw Marks |
Depth <= 15 |
µm |
Edge Chip |
Length <=1, Depth<=0.5 |
mm |
Surface |
As cut & cleaned |
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