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HEMT GaN On SiC For Power Wafer Manufacturers

HEMT GaN On SiC For Power Wafer Manufacturers photo-1
Negotiable MOQ: 15 Pieces (Price negotiable depending on order volume and customization)
Key Specifications
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Brand Name:
HMT
Place of Origin:
China
Model Number:
4 inch
Payment & Shipping
Payment Methods:
Port of Shipment:
SHANGHAI
Delivery Detail:
30 days
Brand Name HMT
Place of Origin China
Model Number 4 inch

HMT, a Chinese GaN Epi Wafer Manufacturer, supply 4-inch and 6-inch GaN-on-SiC Epi Wafer for Power HEMT , ,high-power RF devices for 5G and industrial applications. We always offer high quality but preferential GaN Epi Wafers to worldwide semiconductor companies, research labs, universities.

(1) 5G & Wireless Communications
  • 5G mmWave Power Amplifiers: GaN-on-SiC enables higher efficiency and linearity in 5G base stations.

  • Satellite & Radar Systems: Used in X-band and Ka-band phased arrays for military and aerospace.

(2) Automotive & EVs
  • Traction Inverters: GaN-on-SiC reduces weight and improves efficiency in 800V EV systems.

  • Onboard Chargers (OBCs): Enables faster switching and compact designs.

(3) Defense & Aerospace
  • Electronic Warfare (EW) Systems: High-power RF amplifiers for jamming and radar.

  • Drone & UAV Radars: Lightweight, high-efficiency MMICs for surveillance drones


Product Tags: GaN Epi Wafer Supplier , GaN on SiC Epitaxy Wafer Manufacturer

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Verified Business License
Business Type
Manufacturer
Year Established
2009
Factory Size
10,000-30,000 square meters
Total Employees
11 - 50 People

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