Semiconductor Silicon Monocrystalline Ingot
Specifications
Silicon Monocrystalline IngotTypeDopant N: ArsenicAntimonyPhosphorus
Red Phosphorus
P: Boron
Silicon Monocrystalline ingot
| Growth Method | MCZ |
GDFZ |
NTD |
| Diameter (mm) | 50 ~ 200 |
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| Diameter Tolerance (mm) | ± 0.5 |
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| TypeDopant | N: ArsenicAntimonyPhosphorus Red Phosphorus |
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| P: Boron | |||
| Resistivity (Ω.cm) | 1 × 10-3 ~ 100 |
1 × 10-3 ~ 20,000 |
30-600 |
| Crystal Onentation | <111> <100> <110> |
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Here is few of our reference customer:
ABB, Powerex, OSI, Dynex, Infenion, Semtech, UDT, Fargo, Semikron, Microsemi, Vishay, TFT, Semicoa, Amonix, Avago, MaCom, Quicksil, APT, Solid State Device Inc, Silicon Power, DRS, Proton, Lite-on, Taiwan Semi, Pan Jit, Rectron,Epistar,Ubilux,Arima,Tyntek, Optotech, Epitek, NTT...etc. and also has some China/US customers.
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