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4" 4inch GaN HEMT Epitaxial Wafers

4" 4inch GaN HEMT Epitaxial Wafers photo-1
Negotiable MOQ: 1 set (Price negotiable depending on order volume and customization)
Key Specifications
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Place of Origin:
Taiwan, China
Brand Name:
Atecom
Model Number:
Customized
Payment & Shipping
Payment Methods:
Port of Shipment:
Taiwan
Delivery Detail:
Delivery time depends on order quantity.
Place of Origin Taiwan, China
Brand Name Atecom
Model Number Customized

2" 3" 4" GaN HEMT epitaxial wafers

GaN HEMT epitaxial wafers

 

4" 4inch GaN HEMT epitaxial wafers

 

Features

 

*Superior yield repeatability and within wafer uniformity

*Actual install base track record for RF applications

*InAlN barrier, AlGaN back barrier and other development options are also available

 

Specification

 

4" 4inch GaN HEMT epitaxial wafers

 

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Business Type
Manufacturer, Trading Company, Agent
Year Established
1998
Factory Size
10,000-30,000 square meters
Total Employees
11 - 50 People

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