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Home > Electrical & Electronics > Semiconductor > Intrinsic Semiconductor > 6" 6inch 4H N Type P Type SiC EPI Wafers
6" 6inch 4H N Type P Type SiC EPI Wafers
Negotiable
MOQ: 1 Piece (Price negotiable depending on order volume and customization)
Key Specifications
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Place of Origin:
Taiwan, China
Brand Name:
Atecom
Model Number:
Customized
Payment & Shipping
Payment Methods:
Port of Shipment:
Taipei
Delivery Detail:
Delivery time depends on order quantity.
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Place of Origin
Taiwan, China
Brand Name
Atecom
Model Number
Customized
4" 4inch 6" 6inch 4H
N type P type SiC EPI wafers
Parameters |
Specification |
Unit |
|
Diameter |
4" ~ 6" |
||
Poly-type |
4H |
||
Conductivity |
N-type |
P-type |
|
Dopant |
Nitrogen |
Aluminum |
|
Surface |
(0001) Siliocn-face |
||
Off-orientation |
4 deg off towrd <11-20> |
||
Carrier Concentration |
5E15~1E18 |
5E15~1E19 |
cm-3 |
Thickness |
0.5~20 |
0.5~5 |
µm |
Surface Defect |
≤2.0 |
cm-2 |
|
Roughness (10µmX10µm) |
≤2.0 |
nm |
|
Scratches |
<1 x wafer diameter |
ea/mm |
|
Usable Area |
≥90 |
% |
|
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Business Type
Manufacturer, Trading Company, Agent
Year Established
1998
Factory Size
10,000-30,000 square meters
Total Employees
11 - 50 People
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