IRFP150NPBF Infineon Technologies MOSFET MOSFT 100V 39A 36mOhm 73.3nCAC
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Product Details
Brand Name | Infineon Technologies | Place of Origin | China | |
Model Number | IRFP150NPBF | Type | Other, MOSFET | |
Package Type | Throught Hole |
Product Description
Factory
IRFP150NPBF
Manufacturer: Infineon
Product Category: MOSFET
RoHS: Details
Technology: Si
Mounting Style: Through Hole
Package / Case: TO-247-3
Transistor Polarity: N-Channel
Number of Channels: 1 Channel
Vds - Drain-Source Breakdown Voltage: 100 V
Id - Continuous Drain Current: 39 A
Rds On - Drain-Source Resistance: 36 mOhms
Vgs - Gate-Source Voltage: - 20 V, + 20 V
Vgs th - Gate-Source Threshold Voltage: 1.8 V
Qg - Gate Charge: 110 nC
Minimum Operating Temperature: - 55 C
Maximum Operating Temperature: + 175 C
Pd - Power Dissipation: 140 W
Channel Mode: Enhancement
Packaging: Tube
Brand: Infineon Technologies
Configuration: Single
Height: 20.7 mm
Length: 15.87 mm
Product Type: MOSFET
Manufacturer: Infineon
Product Category: MOSFET
RoHS: Details
Technology: Si
Mounting Style: Through Hole
Package / Case: TO-247-3
Transistor Polarity: N-Channel
Number of Channels: 1 Channel
Vds - Drain-Source Breakdown Voltage: 100 V
Id - Continuous Drain Current: 39 A
Rds On - Drain-Source Resistance: 36 mOhms
Vgs - Gate-Source Voltage: - 20 V, + 20 V
Vgs th - Gate-Source Threshold Voltage: 1.8 V
Qg - Gate Charge: 110 nC
Minimum Operating Temperature: - 55 C
Maximum Operating Temperature: + 175 C
Pd - Power Dissipation: 140 W
Channel Mode: Enhancement
Packaging: Tube
Brand: Infineon Technologies
Configuration: Single
Height: 20.7 mm
Length: 15.87 mm
Product Type: MOSFET
factory pack quantiy: 400
Subcategory: MOSFETs
Transistor Type: 1 N-Channel
Width: 5.31 mm
Unit Weight: 0.211644 oz400
Subcategory: MOSFETs
Transistor Type: 1 N-Channel
Width: 5.31 mm
Unit Weight: 0.211644 oz
Contact Us
- Shenzhen Kexinxin Technology Co., Ltd.
- Contact nameAaron Lin Chat Now
- Phone86-0755-23617721
- AddressFutian, Shenzhen, Guangdong
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