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FQD2N60C / FQU2N60C
N-Channel QFET® MOSFET
600 V, 1.9 A, 4.7 Ω
FAIRCHILD SEMICONDUCTOR
Features
ï 1.9 A, 600 V, RDS(on) = 4.7 Ω (Max.) @ VGS = 10 V,
ID = 0.95 A
ï Low Gate Charge (Typ. 8.5 nC)
ï Low Crss (Typ. 4.3 pF)
ï 100% Avalanche Tested
ï RoHS Compliant
Description
This N-Channel enhancement mode power MOSFET is
produced using Fairchild Semiconductor®’s proprietary planar
stripe and DMOS technology. This advanced MOSFET
technology has been especially tailored to reduce on-state
resistance, and to provide superior switching performance and
high avalanche energy strength. These devices are suitable for
switched mode power supplies, active power factor correction
(PFC), and electronic lamp ballasts.
Product Highlights:
1.9A, 600V, RDS(on) = 4.7W @VGS = 10 V
Low gate charge (typical 8.5 nC)
Low Crss (typical 4.3 pF)
Fast switching
100% avalanche tested
Improved dv/dt capability
package: d-pak
Factory Pack Quantity: 2500
Send Inquiry to This Supplier
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