GN3407
Gem micro semiconductor
sot-23
P-Channel Enhancement-Mode MOSFET (-30V, -4.3A)
VDSS: -30v -4.3A 60 @ VGS = -10 V,ID=-4.3A; 85 @ VGS = -4.5V,ID=-3.0A
Features
• Super high dense cell trench design for low RDS(on).
• Rugged and reliable.
• SOT-23 package
• Ordering information:GN3407-G(Lead(Pb)-free and halogen-free)
GN3407 Pin Assignment & Symbol
3-Lead Plastic SOT-23
Pin 1: Gate 2: Source 3: Drain
Absolute Maximum Ratings(TA=25℃, unless otherwise noted)
Drain-Source Voltage: -30v
gate-Source Voltage: ±20v
drain Current @TA=25℃ -4.3a
Drain Current (Pulsed) a: -20a
Total Power Dissipation @TA=25℃: 1.4w
Operating Junction and Storage Temperature Range: -55 to +150
Thermal Resistance Junction to Ambient (Steady-State) b: 125℃/W
Maximum Junction-to-Lead: 80℃/W
Factory Pack Quantiy: 3000
price: 0.03
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