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GN3407 P-Channel Enhancement-Mode MOSFET (-30V, -4.3A)

GN3407 P-Channel Enhancement-Mode MOSFET (-30V, -4.3A) photo-1
GN3407 P-Channel Enhancement-Mode MOSFET (-30V, -4.3A) photo-2
Negotiable MOQ: 50 Pieces (Price negotiable depending on order volume and customization)
Key Specifications
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Brand Name:
other
Place of Origin:
China
Model Number:
GN3407
Payment & Shipping
Payment Methods:
Port of Shipment:
China
Delivery Detail:
Delivery time depends on order quantity.
Brand Name other
Place of Origin China
Model Number GN3407
Type Other

GN3407

Gem micro semiconductor

 

sot-23

 

P-Channel Enhancement-Mode MOSFET (-30V, -4.3A)

 

VDSS:      -30v -4.3A   60 @ VGS = -10 V,ID=-4.3A; 85 @ VGS = -4.5V,ID=-3.0A

 

Features

• Super high dense cell trench design for low RDS(on).

• Rugged and reliable.

• SOT-23 package

• Ordering information:GN3407-G(Lead(Pb)-free and halogen-free)

 

GN3407 Pin Assignment & Symbol

3-Lead Plastic SOT-23

Pin 1: Gate 2: Source 3: Drain

 

Absolute Maximum Ratings(TA=25℃, unless otherwise noted)

 

Drain-Source Voltage:   -30v

gate-Source Voltage:   ±20v

drain Current @TA=25℃    -4.3a

Drain Current (Pulsed) a: -20a

Total Power Dissipation @TA=25℃: 1.4w

Operating Junction and Storage Temperature Range: -55 to +150

Thermal Resistance Junction to Ambient (Steady-State) b: 125℃/W

Maximum Junction-to-Lead: 80℃/W

 

Factory Pack Quantiy: 3000

 

price: 0.03


Product Tags: GN3407 , Integrateds Circuit , Electronic Components , Gem micro semiconductor

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Business Type
Trading Company
Year Established
2011
Annual Export Value
US$5 Million - US$10 Million
Port of Shipment
Shenzhen

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