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Help CenterSI7913DN-T1-GE3 Vishay Semiconductors MOSFET -20V Vds 8V Vgs PowerPAK 1212-8
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Mfr. #:
SI7913DN-T1-GE3
Manufacturer: Vishay
Product Category: MOSFET
RoHS: Details
Technology: Si
Mounting Style: SMD/SMT
Package / Case: PowerPAK-1212-8
Transistor Polarity: P-Channel
Number of Channels: 2 Channel
Vds - Drain-Source Breakdown Voltage: 20 V
Id - Continuous Drain Current: 7.4 A
Rds On - Drain-Source Resistance: 37 mOhms
Vgs - Gate-Source Voltage: - 8 V, + 8 V
Vgs th - Gate-Source Threshold Voltage: 1 V
Qg - Gate Charge: 24 nC
Minimum Operating Temperature: - 55 C
Maximum Operating Temperature: + 150 C
Pd - Power Dissipation: 2.8 W
Channel Mode: Enhancement
Tradename: TrenchFET
Series: SI7
Packaging: Reel
Packaging: Cut Tape
Packaging: kxxReel
Brand: Vishay Semiconductors
Configuration: Dual
Height: 1.04 mm
Length: 3.3 mm
Product Type: MOSFET
factory pack quantiy: 3000
Subcategory: MOSFETs
Width: 3.3 mm
Part # Aliases: SI7913DN-GE3
Unit Weight: 0.032487 oz
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