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Help CenterSI2342DS-T1-GE3 Vishay / Siliconix MOSFET 8V Vds 5V Vgs SOT-23
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Mfr. #:
SI2342DS-T1-GE3
Manufacturer: Vishay
Product Category: MOSFET
RoHS: Details
Technology: Si
Mounting Style: SMD/SMT
Package / Case: SOT-23-3
Transistor Polarity: N-Channel
Number of Channels: 1 Channel
Vds - Drain-Source Breakdown Voltage: 8 V
Id - Continuous Drain Current: 6 A
Rds On - Drain-Source Resistance: 17 mOhms
Vgs - Gate-Source Voltage: - 5 V, + 5 V
Vgs th - Gate-Source Threshold Voltage: 800 mV
Qg - Gate Charge: 6 nC
Minimum Operating Temperature: - 55 C
Maximum Operating Temperature: + 150 C
Pd - Power Dissipation: 2.5 W
Channel Mode: Enhancement
Tradename: TrenchFET
Series: SI2
Packaging: Reel
Packaging: Cut Tape
Packaging: KXXReel
Brand: Vishay / Siliconix
Configuration: Single
Fall Time: 25 ns
Product Type: MOSFET
Rise Time: 14 ns
factory pack quantiy: 3000
Subcategory: MOSFETs
Transistor Type: 1 N-Channel
Typical Turn-Off Delay Time: 65 ns
Typical Turn-On Delay Time: 6 ns
Part # Aliases: SI2342DS-T1-BE3
Unit Weight: 0.000282 oz
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