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Help CenterSI2309CDS-T1-GE3 MOSFET -60V Vds 20V Vgs SOT-23
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Mfr. #:
SI2309CDS-T1-GE3
Manufacturer: Vishay
Product Category: MOSFET
RoHS: Details
Technology: Si
Mounting Style: SMD/SMT
Package / Case: SOT-23-3
Transistor Polarity: P-Channel
Number of Channels: 1 Channel
Vds - Drain-Source Breakdown Voltage: 60 V
Id - Continuous Drain Current: 1.6 A
Rds On - Drain-Source Resistance: 345 mOhms
Vgs - Gate-Source Voltage: - 20 V, + 20 V
Vgs th - Gate-Source Threshold Voltage: 3 V
Qg - Gate Charge: 2.7 nC
Minimum Operating Temperature: - 55 C
Maximum Operating Temperature: + 150 C
Pd - Power Dissipation: 1.7 W
Channel Mode: Enhancement
Tradename: TrenchFET
Series: SI2
Packaging: Reel
Packaging: Cut Tape
Packaging: kxxReel
Brand: Vishay Semiconductors
Configuration: Single
Fall Time: 10 ns
Height: 1.45 mm
Length: 2.9 mm
Product Type: MOSFET
Rise Time: 10 ns
Factory pack quantity: 3000
Subcategory: MOSFETs
Transistor Type: 1 P-Channel
Typical Turn-Off Delay Time: 15 ns
Typical Turn-On Delay Time: 5 ns
Width: 1.6 mm
Part # Aliases: SI2309CDS-T1-BE3 SI2309CDS-GE3
Unit Weight: 0.000282 oz
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