- Shenzhen Kexinxin Technology Co., Ltd.
-
Shenzhen, Guangdong, China
- Main products: Integrated Circuits, Tantalum Capacitor, Mosfet, Crystal, Diodes
IRF640NPBF Infineon Technologies MOSFET MOSFT 200V 18A 150mOhm 44.7nC
US$ 0.5 - 1.2
/ Piece
2000 Pieces(Min. Order)
- Shenzhen
- T/T L/C D/P D/A Credit Card PayPal Cash
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Product Details
| Brand Name | Infineon Technologies | Place of Origin | China | |
| Model Number | IRF640NPBF | Type | Other, MOSFET | |
| Package Type | Throught Hole |
Product Description
Factory
Mfr. #:
IRF640NPBF
Manufacturer: Infineon
Product Category: MOSFET
RoHS: Details
Technology: Si
Mounting Style: Through Hole
Package / Case: TO-220-3
Transistor Polarity: N-Channel
Number of Channels: 1 Channel
Vds - Drain-Source Breakdown Voltage: 200 V
Id - Continuous Drain Current: 18 A
Rds On - Drain-Source Resistance: 150 mOhms
Vgs - Gate-Source Voltage: - 20 V, + 20 V
Vgs th - Gate-Source Threshold Voltage: 2 V
Qg - Gate Charge: 44.7 nC
Minimum Operating Temperature: - 55 C
Maximum Operating Temperature: + 175 C
Pd - Power Dissipation: 150 W
Channel Mode: Enhancement
Packaging: Tube
Brand: Infineon Technologies
Configuration: Single
Fall Time: 5.5 ns
Forward Transconductance - Min: 6.8 S
Height: 15.65 mm
Length: 10 mm
Product Type: MOSFET
Rise Time: 19 ns
factory pack quantiy: 2000
Subcategory: MOSFETs
Transistor Type: 1 N-Channel
Typical Turn-Off Delay Time: 23 ns
Typical Turn-On Delay Time: 10 ns
Width: 4.4 mm
Unit Weight: 0.068784 oz
Contact Us
- Shenzhen Kexinxin Technology Co., Ltd.
- Contact nameAaron Lin Chat Now
- Phone86-0755-23617721
- Address, Shenzhen, Guangdong, China
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