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Help CenterSI2304BDS-T1-E3 Vishay Semiconductors MOSFET 30V 3.2A 0.07Ohm
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Mfr. #:
SI2304BDS-T1-E3
Manufacturer: Vishay
Product Category: MOSFET
RoHS: Details
Technology: Si
Mounting Style: SMD/SMT
Package / Case: SOT-23-3
Transistor Polarity: N-Channel
Number of Channels: 1 Channel
Vds - Drain-Source Breakdown Voltage: 30 V
Id - Continuous Drain Current: 2.6 A
Rds On - Drain-Source Resistance: 70 mOhms
Vgs - Gate-Source Voltage: - 20 V, + 20 V
Vgs th - Gate-Source Threshold Voltage: 1.5 V
Qg - Gate Charge: 2.6 nC
Minimum Operating Temperature: - 55 C
Maximum Operating Temperature: + 150 C
Pd - Power Dissipation: 750 mW
Channel Mode: Enhancement
Tradename: TrenchFET
Series: SI2
Packaging: Reel
Packaging: Cut Tape
Packaging: KXXReel
Brand: Vishay Semiconductors
Configuration: Single
Fall Time: 15 ns
Forward Transconductance - Min: 6 S
Height: 1.45 mm
Length: 2.9 mm
Product Type: MOSFET
Rise Time: 12.5 ns
factory pack quantiy: 3000
Subcategory: MOSFETs
Transistor Type: 1 N-Channel
Typical Turn-Off Delay Time: 19 ns
Typical Turn-On Delay Time: 7.5 ns
Width: 1.6 mm
Part # Aliases: SI2304BDS-T1-BE3 SI2304BDS-E3
Unit Weight: 0.000282 oz
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