5SHY3545L0014 IGCT ABB Thyristor Module

5SHY3545L0014 IGCT ABB Thyristor module

5SHY3545L0014 IGCT ABB Thyristor module

This section is a detailed guide to the correct understanding of an IGCT data sheet. Parameters and ratings will be defined and illustrated by figures where appropriate, while following the sequence in which parameters appear in the data sheet. For explanation purposes, data and diagrams associated with IGCT type 5SHY 55L4500 have been used, but because all IGCTs have similar data sheets, this guide is applicable to all IGCTs. Additionally a 5SHX 26L4520 data sheet is used to explain the diode parameters of reverse-conducting devices. The data sheets distinguish between maximum rated values and characteristic values. Maximum rated values indicate limits beyond which damage to the device may occur. Characteristic values are parameters defined under typical application conditions. Hitachi Energy reserves the right to change data sheets without notice. Therefore, for the latest version, 

These key features briefly describe the IGCT without reference to operating conditions. The data presented here also appears in the corresponding section of the data sheet, together with operating or test conditions. For example, ITSM = 33 x 103 A can also be found in the on-state section, where this value applies at tp = 10 ms and Tvj = 125 °C, with zero reapplied voltage

VDRM: VDRM is the maximum repetitive voltage in the forward direction. The IGCT is able to block this voltage at line frequencies of 50 or 60 Hz, assuming a sinusoidal voltage waveform. VDRM is a maximum rating; if exceeded, leakage current and power loss may increase rapidly and may lead to thermal runaway and subsequent blocking degradation. Although VDRM specifies the IGCT’s quasi-static blocking capability, it is, in fact, the maximum dynamic voltage, VDM, that IGCTs can withstand following turn-off. It is important to note that the IGCT can only block rated voltage if the gate unit is energized.

VDC-link: VDC-link is the maximum continuous DC voltage for a specified failure rate (100 FIT for example), due to cosmic radiation. Exceeding this voltage does not immediately lead to device failure, but the probability of a cosmic radiation failure increases progressively with applied DC voltage. A detailed explanation and IGCT type-specific calculations are printed in the application note 5SYA 2046 «Failure rate of IGCTs due to cosmic rays».

VRRM: VRRM is the maximum repetitive voltage in the reverse direction. For all asymmetric IGCTs, this value is inthe range of 17 V. It is determined by the reverse blocking capability of the gate-tocathode junction (VGRM).

DRM: IDRM specifies the maximum leakage current, when VDRM is applied. It is measured at Tvj max, with sinusoidal voltage pulses (tp = 10 ms) and an energized gate unit.