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5SHY3545L0016 3BHB020720T0002 ABB Serial link module
5SHY3545L0016 3BHB020720T0002 ABB Serial link module
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The definitions for IT(AV)M and IT(RMS) originate from classic phase control thyristor practice, which mainly applies to line frequency applications at 50 and 60 Hz. Since in most IGCT applications, the current waveforms are far from sinusoidal and the switching losses form a considerable part of total power losses, IT(AV)M and IT(RMS) have no real practical meaning. However, they may be useful for comparison with other products, as already mentioned.
I TSM: Max. non-repetitive surge current is the max. allowed and pulsewidth dependent peak value of a half-sinusoidal surge current, with applied at an instant when the IGCT is operating at its maximum junction temperature. Although, in practice, the case temperature prior to a surge is always below 125 °C, both the junction and the housing are heated to 125 °C when the surge current limit is established. This worst-case test condition provides an additional margin to the real stress in an application. For surge current requirements that do not resemble a sine half wave or cannot be covered by a sine half wave shown in Fig. 8, please contact your nearest representative or the address shown at the end of this application note for evaluation. During a surge, the junction heats up to a temperature well above its rated maximum value. Therefore, the thyristor is no longer able to block rated voltage, so the ITSM values are valid only for VD = VR 0 V after the surge, i.e. without reapplied voltage. Though a single surge does not cause any irreversible damage to the silicon wafer, it should not be allowed to occur too frequently.
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2 t: Limiting surge current load integral I2 t is an abbreviation and stands for lT2 dt. This value is derived from the ITSM value discussed above, according to the following expression: (for half-sinusoidal waveforms) To protect the IGCT, the I2 t of a semiconductor fuse must be lower than the maximum I2t of the IGCT. The constraints for ITSM applies similarly to I2 t. LD: Stray inductance between IGCT and anti-parallel diode: for optimized switching behavior, it is recommended to minimize LD as much as possible. Typical application values are in the range of 30…50 nH. However, in the data sheets for asymmetric IGCTs, a maximum LD is defined and was verified at operation. diT/dtcr: This is the critical rate of rise of forward current at IGCT turnon. Please refer to the detailed description in section 3.3. VT: VT is the on-state voltage at a given on-state current IT (normally ITGQM) and at maximum junction temperature. VT is influenced, within limits, by the irradiation dose that determines minority carrier lifetime. A lower VT automatically implies a higher Eoff, and vice versa. Maximum and typical values are shown.
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