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5SHY3545L0020 5SXE05-0154 ABB Original module card
5SHY3545L0020 5SXE05-0154 ABB Original module card
The maximum permissible on-state diT /dt at turn-on. The maximum diT /dt is very much gate current dependent (rate-of-riseof-gate-current, diG/dt and peak gate current amplitude IGM). A large gate current ensures that all IGCT cathode segments are turned on simultaneously and within a short time ensuring fast, uniform conduction and avoiding localized conduction and «hot spots», which could destroy the IGCT. In most applications, turn-on of the IGCT causes a diode turn-off. The maximum diode turn-off di/dt usually limits the allowed rate of commutation. The turn-on gate conditions (diG/dt, IGM) of the gate-unit are designed to amply cover the (turnoff) di/dt capabilities of fast switching diodes. It would be possible to realize higher diT /dtcr for the IGCT but this would unnecessarily increase the losses, input power and cooling requirements of the gate-unit.
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TGQM: ITGQM is the maximum anode current that can be turned-off under the specified conditions. The value of ITGQM depends on commutation voltage VD, junction temperature Tvj and the on-time ton. These dependencies are specified in the diagram «Safe Operating Area» of the data sheet (see Fig. 11). Turn-off switching outside the safe operating area must be avoided. It may lead to immediate failure even for a single event.
All asymmetric and reverse conducting IGCTs are specified with a «clamp circuit» that limits the voltage but not the dv/dt. This type of di/dt snubber is normally used in voltage-source inverters (VSI). Reverse blocking IGCTs are specified with an R-C snubber, which additionally limits the dv/dt at turn-off. This is a typical snubber for current source inverters (CSI). A low snubber or clamp-inductance is necessary to limit the over-voltage spike VDSP. Excessive VDSP can lead to dynamic avalanche breakdown of the GCT and excessive losses.
t doff, tdoff SF: Turn-off delay time and turn-off delay time status-feedback respectively. These definitions are given in Fig. 3. For more information on the status-feedback see application note 5SYA 2031 «Applying IGCT gate units»
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