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5SHY5045L0020 5SHY6545L0001 ABB Unit Module IGCT

5SHY5045L0020 5SHY6545L0001 ABB Unit Module IGCT photo-1
5SHY5045L0020 5SHY6545L0001 ABB Unit Module IGCT photo-2
5SHY5045L0020 5SHY6545L0001 ABB Unit Module IGCT photo-3
5SHY5045L0020 5SHY6545L0001 ABB Unit Module IGCT photo-4
5SHY5045L0020 5SHY6545L0001 ABB Unit Module IGCT photo-5
US$ 100 - 260 MOQ: 1 Pound
Key Specifications
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Brand Name:
ABB
Place of Origin:
Sweden
Model Number:
5SHY5045L0020 5SHY6545L0001
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Port of Shipment:
China
Delivery Detail:
Delivery time depends on order quantity.
Brand Name ABB
Place of Origin Sweden
Model Number 5SHY5045L0020 5SHY6545L0001

5SHY5045L0020 5SHY6545L0001 ABB Unit module IGCT

5SHY5045L0020 5SHY6545L0001 ABB Unit module IGCT


During power-up a minimum rectified average current IGIN Min has to be supplied. This current may be lower than the internal current limitation of the gate unit. However, to avoid start-up problems and breakdown of the power supply voltage it is recommended to use a power supply that is able to deliver at least the value of the internal current limitation I GIN Max of the gate unit specified in the data sheet. 

Power Consumption The total power consumption of the IGCT gate unit is strongly load dependent as can be seen in figure 5. The turn-off current ITGQ, the switching frequency fS, the silicon temperature Tvj and the device technology (determining the gate charge QGQ) have a major influence on power consumption. The bulk of the power though, is transferred to the GCT with only a small part of it being dissipated in the gate circuit itself. Nevertheless, gate unit limitations must be checked before the operating range in a specific application is determined. For thermal limitations see figure 20.

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In some operation modes, the IGCT should commutate a number of high current pulses. The gate unit includes a significant capacitor bank to provide that capability. Since the energy capacity of the gate unit and its supply is limited, certain limitation occur for triggering. The capability to generate a number of pulses within a certain time window is defined by the switching current ITGQ and the model specific factor found in the data sheet. The following factor is calculated to prove the gate unit capability for this specific operation mode.


Below is an sample the verify the capability of commutating 100 pulses (n) of switching current of 3 kA (ITGQ) within a time window of 20 ms for a IGCT with a model specific constant of 0.715 kA.


Process: 1. Calculate the current factor 3 kA+ (100 x 0.715 kA) = 74.5 kA 2. Verify the calculated factor of 74.5 kA within the diagram (e.g. diagram item 6) a. Select the graph of the gate unit supply voltage VGAC b. Verify, that the value is equal or less to the graph at the time of the time window’s value In the given sample, the capability is given for VGAC = 40 V, but is insufficient for VGAC = 28 V Remarks: Ensure the minimum times for ton and toff are maintained to disable undesired retriggering. Furthermore the thermal effects must verified to avoid the device overstress due to exceeding of junction temperature limits TvjMax generated by the switching losses of the GCT during this operation mode

Product Tags: 5SHY5045L0020 , 5SHY6545L0001 , ABB 5SHY5045L0020

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