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MTCS2601 silicon sensing die in SMD ceramic package
The MTCS2601 sensors consist of a micro-machined thermal conductivity sensor using four Ni-Pt resistors realized using MEMS technologies. The sensor is mounted in a miniature SMD package, available on tape and real. This MEMS TC sensor, combined with simple low power CMOS standard integrated circuits, is an excellent choice for size-critical leakage OEM detector or miniature vacuum gauge based on Pirani principle requiring ultra-low power consumption, long lifetime and no maintenance. Applications are primary pressure control in rough environment with power and size constraints, or detection in closed volume of gas leakage or moisture, or intrusion.
MTCS2601 Thermal Conductivity Sensor Applications
• Primary vacuum control following Pirani principle. This sensor is easily added within a pressure valve or directly in vacuum pipes or systems, such as small mechanical pumping systems, vacuum pumping machine and analytical instruments .
• Leakage miniature SMD sensor as control integrity of closed systems or instruments under dedicated pressure, able to
detect defect like corrosion or simply box opening (load cells; flywheel systems, Dewar…)
MTCS2601 Thermal Conductivity Sensor Features
• Thermal conductivity sensor for primary vacuum measurement
• Silicon device in SMD ceramic package. Delivery in Tape & Reel
• Small dimension compatible with measurement in very small volume
• Low power consumption and short time constants
• Optimal sensitivity in the range 10-2 to 10+2 mbar. Possible extension in the range 10-4 to Patm
• Low cost for volume application
• Robust MEMS sensor following physical Pirani principle (hot wire) with no chemical reaction, based on gas thermal conductivity variation versus pressure
• Measuring range from 10-4 to 1000 mbar with excellent reproducibility
• Temperature compensated with excellent matching of compensation and heating resistors on the same silicon die
• Ultra small sensor gas volume such as <0.1 cm3
• Robust and long MTBF (> 30’000 hs) due to physical resistive sensing principles
• Ultra-low power sensor consumption in operation (<6 mW) due to the use of MEMS based micromachined silicon sensor with small heated mass.
• Ultra-fast response time <50 ms
• Insensitive to mounting position
• Gold contact version upon request for corrosive gas environment
• Compatible with a simple constant excess temperature operation circuit
MTCS2601 Thermal Conductivity Sensor Electrical specification
| Description | Symbol | Min | Typical | Max | Unit |
| Measuring resistance at 23°C ± 2°C | Rm1 and Rm2 | 110 | 120 | 135 | Ω |
| Reference resistance at 23°C± 2°C | Rt1 and Rt2 | 240 | 270 | 300 | Ω |
| Ratio | Rtx/(Rm1+Rm2) | 1.06 | 1.12 | 1.18 | |
| Resistance difference | Rm1-Rm2 | -1.5 | ------ | +1.5 | Ω |
| Resistance difference | Rt1-Rt2 | -3.5 | ------ | +3.5 | Ω |
| Temperature coefficient (Rm,Rt) 20°C-100°C | α | 0.0050 | 0.0055 | 0.0060 | /°C |
| Geometry factor | G | 3.9 | mm | ||
| Thermal loss coefficient | β | 0.101 | mW/°C |
MTCS2601 Thermal Conductivity Sensor Absolute maximum ratings
| Description | Symbol | Min | Typical | Max | Unit |
| Heating current in (Rm1+Rm2) – Air; Ta=23°C | Ih | 6.2 | mA | ||
| Heating Power (Rm1+Rm2) – Air; Ta=23°C | P | 15.8 | mW | ||
| Membrane temperature | Tm | 180 | °C | ||
| Ambient temperature | Ta | -20 | 100 | °C | |
| Humidity - No condensing | RH | 0 | 100 | % |
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