FZ Silicon IC Wafer for Discrete and MEMS
FZ silicon IC wafer for discrete and MEMS
Diameter (mm) |
50.8 |
76.2 |
100 |
125 |
150 |
200 |
Growth Method |
FZ |
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Type/Dopant |
N: Phosphorus |
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P: Boron | ||||||
Resistivity (Ω.cm)* |
FZ: 1 ~ 20,000 |
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Thickness (μm)* |
381 |
381 |
525 |
525 |
675 |
725 |
Tolerance (μm) |
Typical ± 25 |
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Lifetime (μsec)* |
> 100 ~ 1000 |
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TTV (μm)* |
< 10 |
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* Other surface conditions & customized specifications are welcome | ||||||
Backside Seal LTO & Poly both are available | ||||||
Other unmentioned parameters are per Semi Standard | ||||||
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