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Help Center4 Inch Diameter 4H N Type Silicon Carbide (SIC) Wafer
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4 inch diameter 4H N type Silicon Carbide (SIC) wafer
We provide high quality SiC wafer( Silicon Carbide ) to electronic and optoelectronic
industry . SiC wafer is a next generation semiconductor material , with unique electrical
propertiesand excellent thermal properties , compared to silicon wafer and gallium
arsenide wafer , SiC is more suitable for high temperature and high power
device .SiC wafer can be supplied in diameter 2 inch , both 4-H or 6-H
polytype N-type , Nitrogent doped , and Si face polished .
Please contact us for more information
• Low lattice mismatch
• High thermal conductivity
• Low power consumption
• Excellent transient characteristics
• High band gap
Applications:
• GaN epitaxy device
• Optoelectronic device
• High frequency device
• High power device
• High temperature device
• Light emitting diodes
Send Inquiry to This Supplier
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