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3 Inches 4H SiC Single Crystal Wafer

3 Inches 4H SiC Single Crystal Wafer photo-1
Negotiable MOQ: 100 Pieces (Price negotiable depending on order volume and customization)
Key Specifications
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Place of Origin:
Beijing, China
Model Number:
SiC
Payment & Shipping
Payment Methods:
Port of Shipment:
TIANJIN
Delivery Detail:
Delivery time depends on order quantity.
Place of Origin Beijing, China
Model Number SiC

 3 inches 4H  SiC single crystal Wafer

 

 

We provide high quality SiC wafer( Silicon Carbide ) to electronic and optoelectronic

 industry . SiC wafer is a next generation semiconductor material , with unique electrical 

propertiesand excellent thermal properties , compared to silicon wafer and gallium
arsenide wafer , SiC is more suitable for high temperature and high power
device .SiC wafer can be supplied in diameter 2 inch , both 4-H or 6-H
polytype N-type , Nitrogent doped , and Si face polished . 

Please contact us for more information 

3 inches 4H SiC single crystal Wafer

 

 3 inches 4H SiC single crystal Wafer

FEATURES

 

• Low lattice mismatch
• High thermal conductivity 
• Low power consumption 
• Excellent transient characteristics
• High band gap

 

Applications:

• GaN epitaxy device 
• Optoelectronic device 
• High frequency device 
• High power device 
• High temperature device 
• Light emitting diodes

 

SPECIFICATION

 3 inches 4H SiC single crystal Wafer

 

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Business Type
Manufacturer
Year Established
2007
Factory Size
3,000-5,000 square meters
Total Employees
101 - 200 People

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